Many-body theory of a rapidly varying inhomogeneous electron gas

Dielectric formulation for inhomogeneous electron gas, and Green function formalism for treating static dielectric screening of point impurity in electron ga

Molecular Beams

Contains reports on two research projects.Joint Services Electronics Programs (U.S. Army, U.S. Navy, and U.S. Air Force) under Contract DA 28-043-AMC-02536(E)Sloan Fund for Basic Research (M.I.T. Grant 99

Physical Electronics and Surface Physics

Contains research objectives and reports on two research projects.National Aeronautics and Space Administration (Grant NGR-22-009-091)M. I. T. Cabot Solar Energy FundJoint Services Electronics Programs (U. S. Army, U.S. Navy, and U.S. Air Force) under Contract DA 28-043-AMC-02536(E

Physical Electronics and Surface Physics

Contains research objectives and reports on four research projects.National Aeronautics and Space Administration (Grant NGR-22-009-091)M. I. T. Cabot Solar Energy FundJoint Services Electronics Programs (U. S. Army, U.S. Navy, and U.S. Air Force) under Contract DA 36-039-AMC-03200(E

Physical Electronics and Surface Physics

Contains reports on three research projects.Joint Services Electronics Programs (U. S. Army, U. S. Navy, and U. S. Air Force) under Contract DA 36-039-AMC-03200(E)National Aeronautics and Space Administration (Grant NGR-22-009-09-091)National Aeronautics and Space Administration (Grant NsG-496

Plasma Magnetohydrodynamics and Energy Conversion

Contains reports on five research projects.U. S. Air Force. Aeronautical Systems Division (Contract AF33(615)-1083)National Science Foundation (Grant GK-19

Plasma Magnetohydrodynamics and Energy Conversion

Contains reports on four research projects.National Science Foundation (Grant G-24073)United States Air Force, Aeronautical Systems Division (Contract AF33(615)-1083

Energetic and spatial bonding properties from angular distributions of ultraviolet photoelectrons: application to the GaAs(110) surface

Angle-resolved ultraviolet photoemission spectra are interpreted by combining the energetics and spatial properties of the contributing states. One-step calculations are in excellent agreement with new azimuthal experimental data for GaAs(110). Strong variations caused by the dispersion of the surface bands permit an accurate mapping of the electronic structure. The delocalization of the valence states is discussed analogous to photoelectron diffraction. The spatial origin of the electrons is determined, and found to be strongly energy dependent, with uv excitation probing the bonding region.Comment: 5 pages, 3 figures, submitted for publicatio

Field emission from Luttinger liquids and single-wall carbon nanotubes

We develop a theory for the field emission effect in Luttinger liquids and single-wall carbon nanotubes at the level of the energy resolved current distribution. We generalise Fowler-Nordheim relations. Just below the Fermi edge, we find a power-law vanishing current distribution with the density of states exponent. The current distribution above the Fermi edge owes its existence to a peculiar interplay of interactions and correlated tunnelling. It displays a non-trivial power-law divergence just above the Fermi energy.Comment: 4 pages, 2 figures (eps files

Relation between inelastic electron tunneling and vibrational excitation of single adsorbates on metal surfaces

We analyse theoretically a relation between the vibrational generation rate of a single adsorbate by tunneling electrons and the inelastic tunneling (IET) current in scanning tunneling microscope, and the influence of the vibrational excitations on the rate of adsorbate motions. Special attention is paid to the effects of finite lifetime of the vibrational excitations. We show that in the vicinity and below the IET threshold the rate of adsorbate motion deviates from a simple power-law dependence on the bias voltage due to the effects of bath temperature and adsorbate vibrational lifetime broadenings. The temperature broadening appears to be confined near the threshold voltage within a narrow region of several $k_B T$, whereas the lifetime broadening manifests itself in a much wider region of applied voltages below the IET threshold.Comment: 8 pages including 4 figure